0.18μm/0.16μm/0.153μm 1.8V/3.3V G0.18μm/0.16μm/0.153μm 1.8V/5V G
Overview
公司0.18um工藝是基于客戶對于Fab兼容目的而開發(fā)可廣泛應(yīng)用的工藝。0.18um邏輯工藝可提供1.8V電壓core device、3.3V或者5V 電壓IO device， 并同時(shí)提供Native VT、Medium low VT器件、高性能電容、高精度poly電阻、可變電容器、電感等可選工藝可方便客戶電路設(shè)計(jì)。
Shrunk工藝可以有效的降低客戶成本，同時(shí)Shrunk工藝的器件特性同不Shrunk工藝非常接近。公司 0.162um工藝是0.18um 90% Shrunk工藝, 公司 0.153um工藝是0.18um 85% Shrunk工藝。
公司0.18um工藝提供OTP/MTP工藝，OTP/MTP 工藝同現(xiàn)有單多晶邏輯工藝平臺兼容，不需要額外增加光刻層次。
Key Features
| 0.18G | ||
| Core Voltage | Typical | 1.8V |
| Core Device | Typical VT | √ |
| Low VT | √ | |
| IO Device | 3.3V | √ |
| 5V | √ | |
| SRAM BItcell(um2) | 4.65 |
0.18um Process Family
| 0.18G | ||
| Special Process | Mix | √ |
| RF | √ | |
| OTP/MTP | √ | |
| Design | Technical File | √ |
| PDK | √ | |
| IP/Library | √ |
0.18μm CMOS EN (3.3V or 5V)
Overview
公司提供的0.18μm CMOS EN (3.3V or 5V)工藝擁有極具競爭力的光刻次數(shù)和緊湊的設(shè)計(jì)規(guī)則，為DC-DC、LED屏驅(qū)動、音頻功放、MCU等應(yīng)用提供了很好的解決方案。
Key Features
- Single poly, rich metal (Aluminum) options (support 2~6, thin/thick top metal options)
- Hi-Rsh poly resistor, MIM/MOS capacitor, OTP/FT E–fuse and other rich device options
- Full Design Kit support with PDK\CMD\library
Application
- DC-DC
- LED display
- Audio amplifier
- MCU
0.18μm e-Flash
Overview
公司提供的0.18μm e-Flash工藝兼容0.18um logic工藝，提供業(yè)界具有競爭力的閃存IP，高可靠性，低功耗和低成本，為智能卡、各類屏接觸控制、MCU等應(yīng)用提供了很好的解決方案。
Key Features
- Double polys, support 4~6 top metal options
- Industrial competitive flash macro cell size, low voltage, low power operation
- Full Design Kit support with PDK\ std cell\IO Library
Application
- Smart card
- Touch-screen controller
- MCU
